Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra

• Authors: M. Baranowski , M. Latkowska , R. Kudrawiec , J. Misiewicz
• Languages of publication: EN

Abstracts

EN

Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.

Keywords

EN

78.66.Fd; 78.55.Cr; 78.20.Bh

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.Fd: III-V semiconductors
• 78.20.Bh: Theory, models, and numerical simulation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 899-901

Dates

published

2011-11

Contributors

author

M. Baranowski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

M. Latkowska

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

R. Kudrawiec

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.899