Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals

• Authors: F. Komarov , L. Vlasukova , O. Milchanin , A. Mudryi , J. Zuk , K. Pyszniak , M. Kulik
• Languages of publication: EN

Abstracts

EN

We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to H_2^{+} ions (100 keV, 1.2 × 10^{16} cm^{-2} in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.

Keywords

EN

78.66.-w; 78.60.Fi

Discipline

• 78.60.Fi: Electroluminescence
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 204-207

Dates

published

2011-07

Contributors

author

F. Komarov

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

L. Vlasukova

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

O. Milchanin

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

A. Mudryi

• Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk, Belarus

author

J. Zuk

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

K. Pyszniak

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.204