Defect Transformations in Ion Bombarded InGaAsP

• Authors: R. Ratajczak , A. Turos , A. Stonert , L. Nowicki , W. Strupiński
• Languages of publication: EN

Abstracts

EN

Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV ^4He ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × 10^{12} to 6 × 10^{14} at./cm^2. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.

Keywords

EN

61.43.-j; 61.72.-y; 81.05.-t; 82.80.-d; 85.40.-e

Discipline

• 61.43.-j: Disordered solids(see also 81.05.Gc Amorphous semiconductors, 81.05.Kf Glasses, and 81.05.Rm Porous materials; granular materials in materials science; for photoluminescence of disordered solids, see 78.55.Mb and 78.55.Qr)
• 85.40.-e: Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology(see also 85.45.-w Vacuum microelectronics; 84.40.Lj Microwave integrated electronics; 42.82.-m Integrated optics; 85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits)
• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 82.80.-d: Chemical analysis and related physical methods of analysis(for related instrumentation, see section 07; for spectroscopic techniques in biological physics, see 87.64.-t)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 136-139

Dates

published

2011-07

Contributors

author

R. Ratajczak

• Sołtan Institute of Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

A. Turos

• Sołtan Institute of Nuclear Studies, 05-400 Otwock/Świerk, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Stonert

• Sołtan Institute of Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

L. Nowicki

• Sołtan Institute of Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.136