Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

• Authors: N. Frantskevich , A. Mazanik , A. Frantskevich , T. Kołtunowicz , P. Żukowski
• Languages of publication: EN

Abstracts

EN

The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.

Keywords

EN

61.72.uf; 73.20.Hb

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 105-107

Dates

published

2011-07

Contributors

author

N. Frantskevich

• Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus

author

A. Mazanik

• Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus

author

A. Frantskevich

• Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus

author

T. Kołtunowicz

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

author

P. Żukowski

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

References

• 1. N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, Solid State Phenomena 156-158, 91 (2010)
• 2. B. Terreault, Physica Status Solidi A 204, 2129 (2007)
• 3. A.V. Frantskevich, A.M. Saad, A.V. Mazanik, N.V. Frantskevich, A.K. Fedotov, V.S. Kulinkauskas, A.A. Patryn, J. Mater. Sci. Mater. Electron. 19, S239 (2008)

Identifiers

DOI

10.12693/APhysPolA.120.105