Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

• Authors: H. Zhuang , J. Wang , H. Liu , J. Li , P. Xu
• Languages of publication: EN

Abstracts

EN

ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.

Keywords

EN

61.46.Km; 61.72.uj; 81.15.Gh; 78.67.-n

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 61.46.Km: Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 78.67.-n: Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures(for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 6
• Pages: 819-823

Dates

published

2011-06

received

2010-06-13

(unknown)

2010-10-25

(unknown)

2010-12-09

Contributors

author

H. Zhuang

• Institutions of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

J. Wang

• Institutions of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

H. Liu

• Institutions of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

J. Li

• Institutions of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

author

P. Xu

• Institutions of Semiconductors, Shandong Normal University, Jinan 250014, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.119.819