EN
Fluorine (F) doping and the formation of F-vacancy (F_{n}V_{m}) clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of F_{n}V_{m} clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of F_{n}V_{m} clusters and V_{n} clusters. The significant binding energies of the V _{n} clusters reveals that the concentration of the large F_{n}V_{m} clusters (n ≥4, m ≥1) will be limited compared to the V_{n} clusters or even smaller clusters.