Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

• Authors: S. Gierałtowska , D. Sztenkiel , E. Guziewicz , M. Godlewski , G. Łuka , B. Witkowski , Ł. Wachnicki , E. Łusakowska , T. Dietl , M. Sawicki
• Languages of publication: EN

Abstracts

EN

We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.

Keywords

EN

81.15.Gh; 77.55.-g; 77.84.Bw; 81.05.Ea

Discipline

• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 81.05.Ea: III-V semiconductors
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 692-695

Dates

published

2011-05

Contributors

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

D. Sztenkiel

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
• Natural Sciences College of Science, Cardinal S. Wyszyński University, Warszawa, Poland

author

G. Łuka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

Ł. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Dietl

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
• Institute of Theoretical Physics, University of Warsaw, Warszawa, Poland

author

M. Sawicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

References

• 1. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, Nature 408, 944 (2000)
• 2. M. J. Biercuk, D.J. Monsma, C.M. Marcus, J.S. Becker, R.G. Gordon, Appl. Phys. Lett. 83, 2405 (2003)
• 3. C. Zhao, T. Witters, P. Breimer, J. Maes, M. Caymax, S. De Gendt, Microelectron. Eng. 84, 7 (2007)
• 4. D. Chiba, F. Matsukura, H. Ohno, Appl. Phys. Lett. 89, 162505 (2006)
• 5. M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, F. Matsukura, J.A. Majewski, T. Dietl, H. Ohno, Nature Phys. 6, 22 (2010)
• 6. T. Suntola, J. Antson, US Patent 4058430 (1977)
• 7. O. Sneh, R.B. Clark-Phelps, A.R. Londergan, J. Winkler, T.E. Seidel, Thin Solid Films 402, 248 (2002)
• 8. E. Guziewicz, I.A. Kowalik, M. Godlewski, K. Kopałko, V. Osinniy, A. Wójcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, M. Guziewicz, J. Appl. Phys. 103, 033515 (2008)
• 9. N. Huby, G. Tallarida, M. Kutrzeba, S. Ferrari, E. Guziewicz, L. Wachnicki, M. Godlewski, Microelectron. Eng. 85, 2442 (2008)
• 10. G. Luka, T. Krajewski, L. Wachnicki, A. Szczepanik, J.D. Fidelus, A. Szczerbakow, E. Lusakowska, K. Kopalko, E. Guziewicz, M. Godlewski, Acta Phys. Pol. A 114, 1229 (2008)
• 11. M. Godlewski, E. Guziewicz, J. Szade, A. Wojcik-Głodowska, Ł. Wachnicki, T. Krajewski, K. Kopalko, R. Jakieła, S. Yatsunenko, E. Przezdziecka, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, Microelectron. Eng. 85, 2434 (2008)
• 12. Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno, J. Appl. Phys. 103, 07D139 (2008)
• 13. M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno, J. Supercond. Nov. Magn. 20, 409 (2007)
• 14. P. Balk, J. Non-Cryst. Solids 187, 1 (1995)

Identifiers

DOI

10.12693/APhysPolA.119.692