ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

• Authors: M. Borysiewicz , I. Pasternak , E. Dynowska , R. Jakieła , V. Kolkovski , A. Dużyńska , E. Kamińska , A. Piotrowska
• Languages of publication: EN

Abstracts

EN

ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.

Keywords

EN

81.05.Dz; 81.15.Cd; 61.05.cp; 68.37.Hk; 68.37.Ps; 68.49.Sf; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 61.05.cp: X-ray diffraction
• 81.05.Dz: II-VI semiconductors
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 68.37.Ps: Atomic force microscopy (AFM)
• 81.15.Cd: Deposition by sputtering
• 68.49.Sf: Ion scattering from surfaces (charge transfer, sputtering, SIMS)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 686-688

Dates

published

2011-05

Contributors

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Pasternak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Dynowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Jakieła

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Kolkovski

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Dużyńska

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. B. Pecz, A. El-Shaer, A. Bakin, A.-C. Mofor, A. Waag, J. Stoemenos, J. Appl. Phys. 100, 103506 (2006)
• 2. Y. Chen, H.J. Ko, S.K. Hong, T. Yao, Appl. Phys. Lett. 76, No. 5 (2000)
• 3. M.W. Cho, A. Setiawan, H.J. Ko, S.K. Hong, T. Yao, Semicond. Sci. Technol. 20, S13 (2005)
• 4. Y. Wang, Z.X. Mei, H.T. Yuan, X.L. Du, J. Zou, J.F. Jia, Q.K. Xue, Z. Zhang, J. Cryst. Growth 305, 74 (2007)
• 5. H. Kato, K. Miyamoto, M. Sano, T. Yao, Appl. Phys. Lett. 84, 22 (2004)
• 6. H. Kato, M. Sano, K. Miyamoto, T. Yao, J. Cryst. Growth 275, (2005)
• 7. F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.-P. Faurie, J. Appl. Phys. 90, 10 (2001)
• 8. M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C.E. Krill, K. Thonke, R. Sauer, Phys. Rev. B 77, 125215 (2008)

Identifiers

DOI

10.12693/APhysPolA.119.686