Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration

• Authors: S. Grzanka , G. Łuka , T. Krajewski , E. Guziewicz , R. Jachymek , W. Purgal , R. Wiśniewska , A. Sarzyńska , A. Bering-Staniszewska , M. Godlewski , P. Perlin
• Languages of publication: EN

Abstracts

EN

Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10^{17} cm^{-3}. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10^{20} cm^{-3}. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10^{-3} Ω cm^2. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.

Keywords

EN

72.80.Ey; 73.40.Kp; 73.40.Lq

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 672-674

Dates

published

2011-05

Contributors

author

S. Grzanka

• TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

G. Łuka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Krajewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Jachymek

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

W. Purgal

• TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland

author

R. Wiśniewska

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

A. Sarzyńska

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

A. Bering-Staniszewska

• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

P. Perlin

• TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
• Institute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland

References

• 1. E. Guziewicz, M. Godlewski, T. Krajewski, Ł. Wachnicki, A. Szczepanik, K. Kopalko, A. Wójcik-Głodkowska, E. Przeździecka, W. Paszkowicz, E. Łusakowska, P. Kruszewski, N, Huby, G. Tallarida, S. Ferrari, J. Appl. Phys. 105, 122413 (2009)
• 2. T. Krajewski, E. Guziewicz, M. Godlewski, L. Wachnicki, I.A. Kowalik, A. Wojcik-Glodkowska, M. Lukasiewicz, K. Kopalko, V. Osinniy, M. Guziewicz, Microelectron. J. 40, 293 (2009)
• 3. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, V. Osinniy, Appl. Phys. Lett. 92, 023502 (2008)
• 4. Han-Ki Kim, Sang-Heon Han, Tae-Yeon Seong, Won-Kook Choi, Appl. Phys. Lett. 77, 1647 (2000)
• 5. D.K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., Wiley-Interscience, New York 1998

Identifiers

DOI

10.12693/APhysPolA.119.672