Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy

• Authors: P. Dyba , E. Placzek-Popko , E. Zielony , Z. Gumienny , S. Grzanka , R. Czernecki , T. Suski
• Languages of publication: EN

Abstracts

EN

p^+-n GaN diodes were studied by means of conventional deep level transient spectroscopy and Laplace transform deep-level spectroscopy methods within the temperature range of 77-350 K. Deep level transient signal spectra revealed the presence of a majority and minority trap of indistinguishable signatures. The Laplace transform deep-level spectroscopy technique due to its superior resolution allows us to unambiguously identify and characterize the traps. The apparent activation energy and capture cross-section for the majority trap were found to be equal to 0.63 eV and 2 × 10^{-16} cm^2 and for the minority trap 0.66 eV and 1.6 × 10^{-15} cm^2. It has been confirmed that the Laplace transform deep-level spectroscopy technique is a powerful tool in characterization of the traps of close signatures.

Keywords

EN

73.61.Ey; 71.55.Eq; 73.40.Kp

Discipline

• 71.55.Eq: III-V semiconductors
• 73.61.Ey: III-V semiconductors
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 669-671

Dates

published

2011-05

Contributors

author

P. Dyba

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Placzek-Popko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Zielony

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

Z. Gumienny

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

S. Grzanka

• TopGaN Ltd.,, Sokołowska 29/37, 01-142 Warszawa, Poland
• Institute of High Pressure Physics "UNIPRESS", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

R. Czernecki

• TopGaN Ltd.,, Sokołowska 29/37, 01-142 Warszawa, Poland
• Institute of High Pressure Physics "UNIPRESS", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

T. Suski

• Institute of High Pressure Physics "UNIPRESS", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.119.669