Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM

• Authors: F. Ivaldi , S. Kret , A. Szczepańska , R. Czernecki , M. Kryśko , S. Grzanka , M. Leszczyński
• Languages of publication: EN

Abstracts

EN

Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.

Keywords

EN

68.35.bg; 68.37.Lp; 68.65.Fg

Discipline

• 68.37.Lp: Transmission electron microscopy (TEM)
• 68.35.bg: Semiconductors
• 68.65.Fg: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 660-662

Dates

published

2011-05

Contributors

author

F. Ivaldi

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Kret

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szczepańska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Czernecki

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Kryśko

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

S. Grzanka

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Leszczyński

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

References

• 1. Gatan Inc. - Manual: Precision Ion Polishing System: Cold Stage Upgrade, 2008
• 2. S. Kret, P. Dluzewski, A. Szczepanska, M. Zak, R. Czernecki, M. Krysko, M. Leszczynski, G. Maciejewski, Nanotechnology 18, 465707 (2007)
• 3. S. Kret, P. Ruterana, D. Gerthseni, Phys. Status Solidi B 227, 247 (2001)
• 4. S. Kret, F. Ivaldi, K. Sobczak, R. Czernecki, M. Leszczynski, Phys. Status Solidi A 207, 1101 (2010)
• 5. R.A. Oliver, M.J. Kappers, C.J. Humphreysi, Phys. Status Solidi C 5, 1475 (2008)

Identifiers

DOI

10.12693/APhysPolA.119.660