Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

• Authors: R. Narkowicz , M. Siegrist , Ph. Moreau , J. Hogge , R. Raguotis , R. Brazis
• Languages of publication: EN

Abstracts

EN

We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise of the sample thickness up to a threshold value, and decreases dramatically above the threshold. At shorter propagation distances the generation efficiency could be correctly simulated using the layered medium approximation and the numerically calculated electron drift velocity response to the pumping wave electric field to describe the change of the semiconductor properties under high-power microwave irradiation.

Keywords

EN

42.65.Ky; 72.20.Ht

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 42.65.Ky: Frequency conversion; harmonic generation, including higher-order harmonic generation(see also 42.79.Nv Optical frequency converters)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 4
• Pages: 509-513

Dates

published

2011-04

Contributors

author

R. Narkowicz

• Semiconductor Phys. Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
• Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
• TU Dortmund University, Otto-Hahn-Str. 4, D-44221 Dortmund, Germany

author

M. Siegrist

• Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

author

Ph. Moreau

• Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
• Association EURATOM-CEA CEA/DSM/IRFM, CEA-Cadarache, F-13108 Saint Paul-les-Durance, France

author

J. Hogge

• Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

author

R. Raguotis

• Semiconductor Phys. Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

R. Brazis

• Semiconductor Phys. Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

References

• 1. J.P. Feve, B. Boulanger, Y. Guillien, Opt. Lett. 25, 1373 (2000)
• 2. K. Miyata, N. Umemura, K. Kato, Opt. Lett. 34, 500 (2009)
• 3. F. Gravier, B. Boulanger, Opt. Express 14, 11715 (2006)
• 4. M. Siegrist, F. Keilmann, C. Nieswand, M. Urban, Infrared Phys. Technol. 36, 407 (1995)
• 5. F. Keilmann, R. Brazis, H. Barkley, W. Kasparek, M. Thumm, V. Erckmann, Europhys. Lett. 11, 337 (1990)
• 6. M. Urban, Ph.D. Thesis No. 1492, EPFL, Lausanne 1996
• 7. N. Blombergen, P.S. Pershan, Phys. Rev. 128, 606 (1962)
• 8. M. Urban, M.R. Siegrist, L. Asadauskas, R. Raguotis, R. Brazis, Appl. Phys. Lett. 69, 1776 (1996)
• 9. R. Brazis, R. Raguotis, M.R. Siegrist, J. Appl. Phys. 84, 3474 (1998)
• 10. C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, Wien 1989
• 11. A. Dargys, J. Kundrotas, Handbook of Physical Properties of Ge, Si, GaAs and InP, Science and Encyclopedia Publ., Vilnius 1994
• 12. R. Bruneti, C. Jacoboni, T. Nava, L. Reggiani, G. Bosman, R.J.J. Zijlstra, J. Appl. Phys. 52, 6713 (1981)
• 13. P. Yeh, Optical Waves in Layered Media, Wiley, New York 1988

Identifiers

DOI

10.12693/APhysPolA.119.509