Low Temperature Overheating Effect in SiGe p-Type Quantum Wells. Methods of the Hole-Phonon Energy Relaxation Time Determination

• Authors: I. Berkutov
• Languages of publication: EN

Abstracts

EN

The temperature dependence of the hole-phonon energy relaxation time τ_{hph} (T) under hot-hole conditions was studied in SiGe p-type quantum wells. The hot-hole temperature T_{h} was estimated through three different experimental methods: (i) from a comparison of the amplitude of the Shubnikov-de Haas oscillations changed by current and temperature; (ii) from a comparison of the phase relaxation time in the effect of weak localization obtained either at different temperatures and minimum current or at different current at a fixed temperature; (iii) from a comparison of the temperature and current dependences of the sample resistance. The values of T_{h} obtained by all three different methods were used to calculate, from the heat balance equation, the temperature dependence of the hole-phonon energy relaxation time τ_{hph} (T). All three temperature dependences τ_{hph} (T) were almost identical and demonstrated transition of the 2D system from "partial inelasticity" to small angle scattering at lower temperatures.

Keywords

EN

72.15.Lh; 72.20.Ht; 72.20.My

Discipline

• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 72.20.Ht: High-field and nonlinear effects
• 72.15.Lh: Relaxation times and mean free paths

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 228-230

Dates

published

2011-02

Contributors

author

I. Berkutov

• B.I. Verkin Institute for Low Temperature Physics and Engineering of NAS of Ukraine, 47, Lenin Ave., Kharkov, 310164, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.119.228