Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes

• Authors: A. Sužiedėlis , S. Ašmontas , J. Požela , J. Gradauskas , V. Nargelienė , Č. Paškevič , V. Derkach , R. Golovashchenko , E. Goroshko , V. Korzh , T. Anbinderis
• Languages of publication: EN

Abstracts

EN

The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.

Keywords

EN

07.57.Kp; 78.70.Gq; 75.47.Pq; 73.40.Kp; 73.40.-c; 75.70.-i

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 73.40.-c: Electronic transport in interface structures
• 78.70.Gq: Microwave and radio-frequency interactions
• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 75.47.Pq: Other materials
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 218-221

Dates

published

2011-02

Contributors

author

A. Sužiedėlis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

J. Požela

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

V. Nargelienė

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

Č. Paškevič

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius, Lithuania

author

V. Derkach

• Usikov Institute of Radiophysics and Electronics of NAS of Ukraine, 12 Ac. Proskura Str., 61085 Kharkov, Ukraine

author

R. Golovashchenko

• Usikov Institute of Radiophysics and Electronics of NAS of Ukraine, 12 Ac. Proskura Str., 61085 Kharkov, Ukraine

author

E. Goroshko

• Usikov Institute of Radiophysics and Electronics of NAS of Ukraine, 12 Ac. Proskura Str., 61085 Kharkov, Ukraine

author

V. Korzh

• Usikov Institute of Radiophysics and Electronics of NAS of Ukraine, 12 Ac. Proskura Str., 61085 Kharkov, Ukraine

author

T. Anbinderis

• Elmika Ltd, Naugarduko Str. 41, Vilnius LT-03227, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.119.218