Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

• Authors: J. Kundrotas , A. Čerškus , J. Liberis , A. Matulionis , J. Leach , A. Morkoç
• Languages of publication: EN

Abstracts

EN

A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

Keywords

EN

78.55.-m; 78.66.-w; 71.55.Eq; 71.35.-y

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 71.55.Eq: III-V semiconductors
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 173-176

Dates

published

2011-02

Contributors

author

J. Kundrotas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Čerškus

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Matulionis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Leach

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA

author

A. Morkoç

• Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA

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Identifiers

DOI

10.12693/APhysPolA.119.173