Physics of THz Field-Effect Transistors

• Authors: J. Łusakowski
• Languages of publication: EN

Abstracts

EN

Field-effect transistors are nowadays considered as possible elements of THz detection and emission systems. Their THz performance is governed by excitations of two-dimensional plasma in the transistor channel. The paper discusses peculiarities of the photon-plasmon coupling mechanism in field-effect transistors and puts it in the perspective of classical investigation of plasma excitations in two-dimensional systems.

Keywords

EN

73.20.Mf; 52.75.-d

Discipline

• 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
• 52.75.-d: Plasma devices(for ion sources, see 29.25.Lg, Ni; for plasma sources, see 52.50.Dg)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 114-116

Dates

published

2011-02

Contributors

author

J. Łusakowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.119.114