Optical Properties of As_{36}Te_{42}Ge_{10}Si_{12} Thin Films

• Authors: N. Hegab , H. El-Mallah
• Languages of publication: EN

Abstracts

EN

Thermally evaporated As_{36}Te_{42}Ge_{10}Si_{12} amorphous chalcogenide films were prepared in a vacuum of 10^{-5} Torr on to glass substrates hold at about 300 K during the deposition process. Measurements of the optical properties have been made. The optical transmittance and reflectance spectra of films in the thickness range 155-395 nm were measured in the wavelength λ range 500-2500 nm. The refractive index n, the extinction coefficient k and the absorption coefficient α were calculated for the studied films. It is found that both n and k are independent on the film thickness. The refractive index n has anomalous behavior for the wavelength λ range 500-1500 nm, while it has normal dispersion for the wavelength greater than 1500 nm. The optical energy gap was estimated from absorption coefficient. The allowed optical transitions were found to be nondirect transitions with optical gap of 1.08 eV for the sample under test. The effect of annealing on the obtained optical parameters was also investigated.

Keywords

EN

78.20.-e; 78.20.Ci; 78.66.-w; 78.68.+m

Discipline

• 78.68.+m: Optical properties of surfaces
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 4
• Pages: 637-642

Dates

published

2010-10

received

2009-10-22

(unknown)

2010-03-22

Contributors

author

N. Hegab

• Faculty of Education, Ain Shams University, Roxy - Cairo, Egypt

author

H. El-Mallah

• Dept of Physics & Mathematical Engineering, Faculty of Engineering, Port-Said University, 42524 Port-Said, Egypt

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Identifiers

DOI

10.12693/APhysPolA.118.637