Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

• Authors: Z. Ahmad , M. Sayyad , Kh. Karimov , M. Saleem , M. Shah
• Languages of publication: EN

Abstracts

EN

Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance (R_{s}) interface states (D_{it}) of the junction. Measured capacitance and conductance were corrected for R_{s}. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 10^{12} cm^{-2} eV^{-1}.

Keywords

EN

79.60.Jv; 73.90.+f

Discipline

• 79.60.Jv: Interfaces; heterostructures; nanostructures
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 3
• Pages: 493-496

Dates

published

2010-03

received

2008-02-14

(unknown)

2009-10-19

Contributors

author

Z. Ahmad

• Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan

author

M. Sayyad

• Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan

author

Kh. Karimov

• Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan

author

M. Saleem

• Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan

author

M. Shah

• Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, NWFP, Pakistan

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Identifiers

DOI

10.12693/APhysPolA.117.493