Composition and Structure of Czochralski Silicon Implanted with H_{2}^{+} and Annealed under Enhanced Hydrostatic Pressure

• Authors: M. Kulik , A. Kobzev , A. Misiuk , W. Wierzchowski , K. Wieteska , J. Bak-Misiuk
• Languages of publication: EN

Abstracts

EN

Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H^{+}) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H_{2}^{+}; fluence D = 1.7 × 10^{17} cm^{-2}, energy E = 50 keV (projected range of H_{2}^{+}, R_{p}(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.

Keywords

EN

61.72.U-; 61.72.uf; 66.10.C-; 61.80.Jh; 81.20.-n; 82.80.Yc; 85.40.-e

Discipline

• 81.20.-n: Methods of materials synthesis and materials processing(see also 61.72.U- Doping and impurity implantation; for crystal growth, see 81.10.-h; for film growth, deposition and epitaxy, see 81.15.-z)
• 66.10.C-: Diffusion and thermal diffusion(for osmosis in biological systems, see 82.39.Wj in physical chemistry; for cellular transport, see 87.16.dp and 87.16.Uv in biological physics)
• 85.40.-e: Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology(see also 85.45.-w Vacuum microelectronics; 84.40.Lj Microwave integrated electronics; 42.82.-m Integrated optics; 85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits)
• 82.80.Yc: Rutherford backscattering (RBS), and other methods of chemical analysis
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)
• 61.72.uf: Ge and Si
• 61.72.U-: Doping and impurity implantation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 2
• Pages: 332-335

Dates

published

2010-02

Contributors

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

A. Kobzev

• Joint Institute for Nuclear Research JINR, Joliot-Curie 6 st., 141980 Dubna, Moscow Region, Russia

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

J. Bak-Misiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.117.332