Defect Structure Formed at Different Stages οf Growth Process in Erbium, Calcium and Holmium Doped YVO_{4} Crystals

• Authors: A. Malinowska , E. Wierzbicka , M. Lefeld-Sosnowska , K. Wieteska , W. Wierzchowski , T. Łukasiewicz , M. Świrkowicz , W. Graeff
• Languages of publication: EN

Abstracts

EN

The defect structure of YVO_{4} single crystals doped with Er^{3+}, Ho^{3+} and Ca^{2+} were studied by X-ray diffraction topographic methods, using laboratory and synchrotron radiation sources. Variously developed block structure was the dominating imperfection of the investigated crystals observed both in conventional Lang and synchrotron topographs. The evaluation of block misorientation was realised by means of superimposed projection and section white beam synchrotron radiation topographs. More possibilities of following the mutual rotation of blocks were provided by means of white beam synchrotron radiation WBSR projection topographs exposed through the fine mesh.

Keywords

EN

61.72.Ff

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 2
• Pages: 328-331

Dates

published

2010-02

Contributors

author

A. Malinowska

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01-919 Warsaw, Poland

author

E. Wierzbicka

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01-919 Warsaw, Poland

author

M. Lefeld-Sosnowska

• Institute of Experimental Physics, University of Warsaw, Hoża 69, PL-00-681 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, PL-05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01-919 Warsaw, Poland

author

T. Łukasiewicz

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01-919 Warsaw, Poland

author

M. Świrkowicz

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg, Germany

References

• 1. B.C. Chakoumakos, M.M. Abraham, L.A. Boatner, J. Solid State Chem. 109, 197 (1994)
• 2. S. Wu, G. Wang, J. Xie, X. Wu, G. Li, J. Cryst. Growthg 249, 176 (2003)
• 3. D.E. Eakins, J.B. LeBret, M.G. Norton, D.F. Bahr, J. Cryst. Growthg 266, 411 (2004)
• 4. S. Erdei, M. Klimkiewicz, F.W. Ainger, B. Keszei, J. Vandlik, A. Süveges, Mater. Lett. 24, 301 (1995)
• 5. S. Zhang, X. Wu, X. Yan, D. Ni, Y. Song, J. Cryst. Growthg 247, 428 (2003)
• 6. M. Kruczek, E. Talik, H. Sakowska, W. Szyrski, Z. Ujma, D. Skrzypek, J. Cryst. Growthg 275, e1715 (2005)
• 7. B.Q. Hu, Y.Z. Zhang, X. Wu, X.L. Chen, J. Cryst. Growthg 226, 511 (2001)
• 8. K. Wieteska, W. Wierzchowski, E. Wierzbicka, A. Malinowska, M. Lefeld-Sosnowska, T. Łukasiewicz, W. Graeff, Acta Phys. Pol. A 114, 455 (2008)
• 9. A.R. Lang, A.P. Makepeace, J. Phys. D, Appl. Phys. 32, A97 (1999)

Identifiers

DOI

10.12693/APhysPolA.117.328