Synthesis and Characterization of Mn-Doped BiFeO_3 Nanoparticles

• Authors: H. Fukumura , S. Matsui , N. Tonari , T. Nakamura , N. Hasuike , K. Nishio , T. Isshiki , H. Harima , K Kisoda
• Languages of publication: EN

Abstracts

EN

BiFeO_3 is a multiferroic material showing antiferromagnetic ordering and ferroelectric behavior simultaneously. Here, Mn-doped BiFeO_3 nanoparticles were synthesized up to 10% of Mn composition by a sol-gel process. The samples showed high crystallinity with no secondary phase up to 2% of Mn doping. A phonon peak at 1250 cm^{-1} in undoped BiFeO_3 showed anomalous intensity enhancement in the magnetically ordered phase below T_N = 643 K due to a spin-phonon coupling. This behavior was less pronounced in the Mn-doped samples, suggesting a suppression of magnetic ordering between Fe^{3+} spins by Mn doping.

Keywords

EN

78.30.Hv; 63.20.D-; 78.30.-j

Discipline

• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 78.30.Hv: Other nonmetallic inorganics
• 63.20.D-: Phonon states and bands, normal modes, and phonon dispersion

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 1
• Pages: 47-50

Dates

published

2009-07

Contributors

author

H. Fukumura

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

S. Matsui

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

N. Tonari

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

T. Nakamura

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

N. Hasuike

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

K. Nishio

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

T. Isshiki

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

H. Harima

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

K Kisoda

• Department of Physics, Wakayama University, Wakayama 640-8510, Japan

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Identifiers

DOI

10.12693/APhysPolA.116.47