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Number of results
2009 | 115 | 6 | 1044-1046

Article title

Advances in High Intensity e-Beam Diode Development for Flash X-Ray Radiography

Content

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Languages of publication

EN

Abstracts

EN
Recent experiments at Sandia National Laboratories have demonstrated an electron beam diode X-ray source capable of producing >350 rad at one meter with 1.7 mm FWHM X-ray source distribution, with a 50 ns pulse-width and X-ray photon endpoint energy spectrum in the 6-7 MeV range. The diode operates at current densities of ≈1 MA/cm^{2}. The intense electron beam rapidly ( ≈ 5 ns) heats the X-ray conversion anode/target, liberating material in the form of low density ion emission early in the pulse and high density plasma later. This environment gives rise to beam/plasma collective effects which dominate the diode and beam characteristics, affecting the radiation properties (dose and spot-size). A review of the diode operation, the measured source characteristics and the simulation methods and diagnostics used to guide its optimization is given.

Keywords

Contributors

author
  • Sandia National Laboratories, Albuquerque, New Mexico, USA
author
  • Sandia National Laboratories, Albuquerque, New Mexico, USA
author
  • Sandia National Laboratories, Albuquerque, New Mexico, USA
author
  • Sandia National Laboratories, Albuquerque, New Mexico, USA

References

  • 1. I.D. Smith, et al., in: Proc. 12th IEEE Int. Pulsed Power Conf., Monterey (CA, USA) 1999, p. 403
  • 2. S.B. Swanekamp, G. Cooperstein, J.W. Schumer et al., IEEE Trans. Plasma Sci. 32, 2004 (2004)
  • 3. D.D. Hinshelwood, R.J. Allen, R. Commisso et al., IEEE Trans. Plasma Sci. 35, 565 (2007)
  • 4. G. Cooperstein et al., Phys. Plasma 8, 4618 (2001)
  • 5. B.V. Oliver, P.F. Ottinger, T.C. Genoni et al., Phys. Plasma 11, 3976 (2004)

Document Type

Publication order reference

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YADDA identifier

bwmeta1.element.bwnjournal-article-appv115n631kz
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