Performance Enhancement of High Power High Repetition Rate Semiconductor Opening Switches

• Authors: A. Abbasi , K. Niayesh , J. Shakeri
• Languages of publication: EN

Abstracts

EN

High power semiconductor opening switches (SOSs) with P^+PNN^+ doping profile have been used in different pulsed power applications because of their fast high current interruption capability. In high pulsed power applications with high repetition rate, temperature increase of the semiconductor switch during its operation is no more negligible. In this paper, the cut-off characteristics of SOSs with different doping profiles are compared and then the impact of the temperature increase on the performance of the semiconductor opening switch is investigated using a detailed physical model. The simulation results indicate that due to the temperature increase of the switch, both the current amplitude and the cut-off characteristics of the switch are affected. Semiconductor opening switches with different base materials (Si and SiC) are studied. Due to favorable intrinsic characteristics of SiC (higher thermal conductivity, higher saturation velocity and higher breakdown electric field), the performance of the SOS can be enhanced using SiC as the base material and the design of compact high pulsed power applications can be achieved.

Keywords

EN

85.30.De

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 983-985

Dates

published

2009-06

Contributors

author

A. Abbasi

• School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

author

K. Niayesh

• School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

author

J. Shakeri

• School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

References

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• 6. K. Bertilsson, Ph.D. Thesis, KTH Microelectronics and Information Technology, 2004

Identifiers

DOI

10.12693/APhysPolA.115.983