Effect of Zinc Incorporation in CuInS_{2} Thin Films Grown by Vacuum Evaporation Method

• Authors: M. Ben Rabeh , M. Kanzari , B. Rezig
• Languages of publication: EN

Abstracts

EN

Structural, optical and electrical properties of Zn-doped CuInS_2 thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from CuInS_2 powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with CuInS_2 source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260°C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped CuInS_2 thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS_2-based solar cells.

Keywords

EN

68.55.ag; 78.20.Ci; 81.15.Ef; 73.61.Le

Discipline

• 73.61.Le: Other inorganic semiconductors
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 68.55.ag: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 3
• Pages: 699-703

Dates

published

2009-03

received

2008-07-28

(unknown)

2008-12-22

Contributors

author

M. Ben Rabeh

• Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs - ENIT, BP 37, Le Belvédère 1002, Tunis, Tunisie

author

M. Kanzari

• Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs - ENIT, BP 37, Le Belvédère 1002, Tunis, Tunisie

author

B. Rezig

• Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs - ENIT, BP 37, Le Belvédère 1002, Tunis, Tunisie

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Identifiers

DOI

10.12693/APhysPolA.115.699