Terahertz Detection by the Entire Channel of High Electron Mobility Transistors

• Authors: M. Sakowicz , J. Łusakowski , K. Karpierz , W. Knap , M. Grynberg , K. Köhler , G. Valusis , K. Gołaszewska , E. Kamińska , A. Piotrowska , P. Caban , W. Strupiński
• Languages of publication: EN

Abstracts

EN

GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.

Keywords

EN

75.75.+a; 78.20.Ls; 85.30.Tv; 07.57.Kp

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 85.30.Tv: Field effect devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1343-1348

Dates

published

2008-11

received

2008-06-07

Contributors

author

M. Sakowicz

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Łusakowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Karpierz

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Knap

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Grynberg

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Köhler

• Fraunhofer-Institut fűr Angewandte Festkörperphysik, D-79108 Freiburg, Germany

author

G. Valusis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania
• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio av. 9, LT-10222, Vilnius, Lithuania

author

K. Gołaszewska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Caban

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.114.1343