Properties of Neutron Doped Multicrystalline Silicon for Solar Cells

• Authors: C. Pochrybniak , K. Pytel , J. Milczarek , J. Jaroszewicz , M. Lipiński , T. Piotrowski , J. Kansy
• Languages of publication: EN

Abstracts

EN

The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.

Keywords

EN

81.40.Wx; 71.60.-i; 78.70.Bj; 61.80.-x

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 81.40.Wx: Radiation treatment (particle and electromagnetic)(see also 61.80.-x Physical radiation effects, radiation damage)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 4
• Pages: 1255-1265

Dates

published

2008-04

received

2007-06-03

Contributors

author

C. Pochrybniak

• Institute of Atomic Energy, Świerk, 05-400 Otwock, Poland

author

K. Pytel

• Institute of Atomic Energy, Świerk, 05-400 Otwock, Poland

author

J. Milczarek

• Institute of Atomic Energy, Świerk, 05-400 Otwock, Poland

author

J. Jaroszewicz

• Institute of Atomic Energy, Świerk, 05-400 Otwock, Poland

author

M. Lipiński

• Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Reymonta 25 30-059 Cracow, Poland

author

T. Piotrowski

• Institute of Electron Technology, Warsaw, Poland

author

J. Kansy

• University of Silesia, Bankowa 12, 40-007 Katowice, Poland

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Identifiers

DOI

10.12693/APhysPolA.113.1255