Formation of Porous n-A_3B_5 Compounds

• Authors: I. Šimkiene , A. Kindurys , M. Treideris , J. Sabataityte
• Languages of publication: EN

Abstracts

EN

Porous layers of A_3B_5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm^2) porous layers of uniform porosity were produced by anodization process of n-type A_3B_5 semiconductors,

Keywords

EN

81.05.-t; 81.05.Rm; 81.05.Ea

Discipline

• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 81.05.Rm: Porous materials; granular materials(for granular superconductors, see 74.81.Bd)
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1085-1090

Dates

published

2008-03

received

2007-08-26

Contributors

author

I. Šimkiene

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

author

A. Kindurys

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

author

M. Treideris

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

author

J. Sabataityte

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.113.1085