Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals

• Authors: S. Ašmontas , R. Raguotis
• Languages of publication: EN

Abstracts

EN

Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.

Keywords

EN

52.65.Pp; 72.10.-d; 72.10.Fk; 72.20.Dp

Discipline

• 52.65.Pp: Monte Carlo methods
• 72.20.Dp: General theory, scattering mechanisms
• 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
• 72.10.-d: Theory of electronic transport; scattering mechanisms

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 929-932

Dates

published

2008-03

received

2007-08-26

Contributors

author

S. Ašmontas

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

R. Raguotis

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

References

• 1. S. Ašmontas, Electrogradient Phenomena in Semiconductors, Vilnius, Mokslas 1984 (in Russian)
• 2. A. Matulionis, R. Raguotis, R. Katilius, Phys. Rev. B 56, 2052 (1997)
• 3. C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, New York 1989
• 4. A. Krotkus, Z. Dobrovolskis, Electron Conduction of Narrow-Gap Semiconductors, Vilnius, Mokslas 1988 (in Russian)
• 5. M. Akarsu,Ö.Özbaş, Turk. J. Phys. 26, 283 (2002)
• 6. V. Dienys, Z. Martūnas, G. Tvardauskas, Fiz. Techn. Poluprovodn. 16, 1856 (1982)
• 7. Z.S. Gribnikov, V.A. Kochelap, Zh. Eksp. Teor. Fiz. 58, 1046 (1970)
• 8. B.K. Ridley, Quantum Process in Semiconductors, Clarendon Press, Oxford 1982

Identifiers

DOI

10.12693/APhysPolA.113.929