Atomic Layer Deposition of Magnetic Thin Films

• Authors: R. Mantovan , M. Georgieva , M. Perego , H. Lu , S. Cocco , A. Zenkevich , G. Scarel , M. Fanciulli
• Languages of publication: EN

Abstracts

EN

We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe_3O_4, while MgO, Al_2O_3, and HfO_2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La_{0.7 Sr_{0.3 MnO_3) while as a tunnel oxide we propose La_2O_3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

Keywords

EN

81.15.-z; 75.70.-i

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 6
• Pages: 1271-1280

Dates

published

2007-12

received

2007-07-04

Contributors

author

R. Mantovan

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

M. Georgieva

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

M. Perego

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

H. Lu

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

S. Cocco

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

A. Zenkevich

• Moscow Engineering Physics Institute, 115409 Moscow, Russia

author

G. Scarel

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

author

M. Fanciulli

• Laboratorio Nazionale MDM CNR-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy

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Identifiers

DOI

10.12693/APhysPolA.112.1271