Photoluminescence Properties of ZnO and ZnCdO Nanowires

• Authors: W. Zaleszczyk , K. Fronc , M. Aleszkiewicz , W. Paszkowicz , J. Wróbel , P. Dłużewski , S. Kret , M. Klepka , Ł. Kłopotowski , G. Karczewski , T. Wojtowicz
• Languages of publication: EN

Abstracts

EN

We report on the photoluminescence studies of ZnO and ZnCdO nanowires grown on SiO_2/Si substrates by low-pressure vapor phase synthesis. X-ray diffraction and transmission electron microscopy measurements show that the crystallographic structure of these ZnO and ZnCdO nanowires is of wurtzite-type with a high crystal perfection. Surface morphology of samples was determined by scanning electron microscopy and atomic force microscopy. The photoluminescence spectra of as-grown nanowires, nanowires extracted from the substrate and deposited onto Si wafer, and nanowires dispersed in ethanol by sonication were investigated at room temperature and compared to each other. The temperature dependence of the near band-gap photoluminescence emitted by the as-grown nanowires was also measured and analyzed.

Keywords

EN

78.55.Et; 78.67.Bf; 81.05.Dz; 81.07.Bc

Discipline

• 78.67.Bf: Nanocrystals, nanoparticles, and nanoclusters
• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors
• 81.07.Bc: Nanocrystalline materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 357-362

Dates

published

2007-08

received

2007-06-09

Contributors

author

W. Zaleszczyk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Fronc

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Aleszkiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Wróbel

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Dłużewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Kret

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Klepka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

Ł. Kłopotowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. M. Yan, M. Lane, C.R. Kannewurf, R.P.H. Chang, Appl. Phys. Lett., 78, 2342, 01
• 2. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, H. Morkoc, J. Appl. Phys., 98, 041301, 05
• 3. B.P. Zhang, N.T. Binh, Y. Segawa, K. Wakatsuki, N. Usami, Appl. Phys. Lett., 83, 1635, 03
• 4. C.X. Shan, Z. Liu, Z.Z. Zhang, D.Z. Shen, S.K. Hark, J. Phys. Chem. B, 110, 11176, 06
• 5. F.Z. Wang, H.P. He, Z.Z. Ye, L.P. Zhu, J. Appl. Phys., 98, 084301, 05
• 6. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade, J. Appl. Phys., 79, 7983, 96
• 7. Y. Lin, D. Wang, Q. Zhao, Z. Li, Y. Ma, M. Yang, Nanotechnology, 17, 2110, 06
• 8. L.M. Li, C.C. Li, J. Zhang, Z.F. Du, B.S. Zou, H.C. Yu, Y.G. Wang, T.H. Wang, Nanotechnology, 18, 225504, 07
• 9. A. van Dijken, E.A. Meulenkamp, D. Vanmaekelbergh, A. Meijerink, J. Phys. Chem. B, 104, 4355, 00

Identifiers

DOI

10.12693/APhysPolA.112.357