Changing the Properties of the CdTe/ZnTe Quantum Dots by in situ Annealing during the Growth

• Authors: P. Wojnar , G. Karczewski , T. Wojtowicz , J. Kossut
• Languages of publication: EN

Abstracts

EN

We present an attempt to control the properties of CdTe/ZnTe self-assembled quantum dots during their formation in the process of molecular beam epitaxy. Namely, the structures were in situ annealed at various temperatures and annealing times after the formation of quantum dots, before the deposition of a capping layer. Depending on the annealing parameters, the dots exhibit different optical properties which were studied by means of spatially resolved photoluminescence. From the analysis of these results, the information about relative changes of the average size and sheet density of quantum dots was extracted.

Keywords

EN

78.67.De; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 78.67.De: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 283-288

Dates

published

2007-08

received

2007-06-09

Contributors

author

P. Wojnar

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kossut

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• ERATO Semiconductors Spintronics Project, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.112.283