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Number of results
2007 | 112 | 2 | 243-247

Article title

Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

Content

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Languages of publication

EN

Abstracts

EN
We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.

Keywords

EN

Year

Volume

112

Issue

2

Pages

243-247

Physical description

Dates

published
2007-08
received
2007-06-09

Contributors

author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of High Pressure Physics (UNIPRESS), Sokołowska 31, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics (UNIPRESS), Sokołowska 31, 01-142 Warsaw, Poland

References

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  • 9. K.P. Korona, P. Wojnar, J.A. Gaj, G. Karczewski, J. Kossut, J. Kuhl, Solid State Commun., 133, 369, 2005
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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv112n219kz
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