Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

• Authors: K. Korona , J. Borysiuk , C. Skierbiszewski , S. Porowski
• Languages of publication: EN

Abstracts

EN

We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.

Keywords

EN

78.47.+p; 72.20.Jv; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 2
• Pages: 243-247

Dates

published

2007-08

received

2007-06-09

Contributors

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Borysiuk

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

C. Skierbiszewski

• Institute of High Pressure Physics (UNIPRESS), Sokołowska 31, 01-142 Warsaw, Poland

author

S. Porowski

• Institute of High Pressure Physics (UNIPRESS), Sokołowska 31, 01-142 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.112.243