Magneto-Luminescence Study of Silicon-Vacancy in 6H­Si

• Authors: A. Wysmołek , K. Wardak , R. Stępniewski , J. Baranowski , M. Potemski , E. Tymicki , K. Grasza
• Languages of publication: EN

Abstracts

EN

The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V_2 line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V_2 line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V_2-line in silicon carbide.

Keywords

EN

78.55.Hx; 71.55.-i; 71.55.Ht

Discipline

• 71.55.Ht: Other nonmetals
• 71.55.-i: Impurity and defect levels
• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 3
• Pages: 437-442

Dates

published

2006-09

received

2006-06-17

Contributors

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Wardak

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Potemski

• Grenoble High Magnetic Field Laboratory, CNRS, BP 166X, 38042 Grenoble, France

author

E. Tymicki

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Grasza

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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• 3. Mt. Wagner, B. Magnysson, W.M. Chen, E. Janzén, E. Sorman, C. Hallin, J.L. Lindstrom, Phys. Rev. B, 62, 16555, 00
• 4. E. Sorman, N.T. Son, W.M. Chen, O. Kordina, C. Hallin, E. Janzen, Phys. Rev. B, 61, 2613, 00
• 5. R. Stepniewski, A. Wysmolek, M. Potemski, K. Pakula, J.M. Baranowski, I. Grzegory, S. Porowski, G. Martinez, P. Wyder, Phys. Rev. Lett., 91, 226404, 03

Identifiers

DOI

10.12693/APhysPolA.110.437