Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

• Authors: F. Gloux , P. Ruterana , T. Wojtowicz , K. Lorenz , E. Alves
• Languages of publication: EN

Abstracts

EN

Rare earth ions implanted GaN has been investigated by transmission electron microscopy versus the fluence, using Er, Eu or Tm ions at 150 keV or 300 keV and at room temperature. Point defect clusters and stacking faults are generated from low fluences (7×10^{13} at/cm^2), their density increases with the fluence up to the formation of a highly disordered layer at the surface. This highly disordered layer is observed from a threshold fluence of 3×10^{14} at/cm^2 at 150 keV and 3×10^{15} at/cm^2 at 300 keV, and appears to be composed of voids and misoriented nanocrystallites. Its thickness rapidly increases with the fluence, and then saturates. Both basal and prismatic stacking faults were observed. Basal stacking faults are I_1 in majority, but E or I_2 have also been identified. I_1 basal stacking faults propagate easily through GaN by folding from basal to prismatic planes. Channelling implantation, increasing the implantation temperature from room temperature to 500ºC, or implanting through a 10 nm thick AlN cap reduce the crystallographic damage, particularly by retarding the formation of the highly disordered layer. Implanting through the AlN cap allows the highly disordered layer formation threshold fluence to be increased by one order of magnitude, as well as the annealing at high temperature (1300ºC) which brings about a strong optical activation of the rare earths.

Keywords

EN

61.72.Vv; 61.72.Nn; 68.37.Lp; 81.05.-t

Discipline

• 68.37.Lp: Transmission electron microscopy (TEM)
• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 61.72.Nn: Stacking faults and other planar or extended defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 125-137

Dates

published

2006-08

received

2006-06-17

Contributors

author

F. Gloux

• SIFCOM, UMR 6176, CNRS-ENSICAEN, 14050 Caen, France

author

P. Ruterana

• SIFCOM, UMR 6176, CNRS-ENSICAEN, 14050 Caen, France

author

T. Wojtowicz

• SIFCOM, UMR 6176, CNRS-ENSICAEN, 14050 Caen, France

author

K. Lorenz

• Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavém, Portugal

author

E. Alves

• Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavém, Portugal

References

• 1. D.S. Lee, A.J. Steckl, Appl. Phys. Lett., 80, 1888, 2002
• 2. J.H. Park, A.J. Steckl, Appl. Phys. Lett., 85, 4588, 2004
• 3. S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren, J. Appl. Phys., 86, 1, 1999
• 4. S.J. Pearton, F. Ren, A.P. Zhang, K.P. Lee, Mater. Sci. Engin. R, 30, 55, 2000
• 5. C. Liu, B. Mensching, M. Zitler, K. Volz, B. Rauschenbach, Phys. Rev. B, 57, 2530, 1998
• 6. S.O. Kucheyev, J.S. Williams, C. Jagadish, J. Zou, G. Li, Phys. Rev. B, 62, 7510, 2000
• 7. S.O. Kucheyev, J.S. Williams, S.J. Pearton, Mater. Sci. Eng. R, 33, 51, 2001
• 8. F.-R. Ding, W.-H. He, A. Vantomme, Q. Zhao, B. Pipeleers, K. Jacobs, I. Moerman, Mater. Sci. Semicond. Process., 5, 511, 2003
• 9. W. Jiang, W.J. Weber, L.M. Wang, K. Sun, Nucl. Instrum. Meth. Phys. Res. B, 218, 427, 2004
• 10. T. Wojtowicz, F. Gloux, P. Ruterana, K. Lorenz, E. Alves, Opt. Mater., 28, 738, 2006
• 11. Y.G. Wang, J. Zou, S.O. Kucheyev, J.S. Williams, C. Jagadish, G. Lie, Electrochem. Solid-State Lett., 6, G34, 2003
• 12. J.B. Gruber, B. Zandi, H.J. Lozykowski, W.M. Jadwisienczak, J. Appl. Phys., 91, 2929, 2002
• 13. B. Pipeleers, S.M. Hogg, A. Vantomme, J. Appl. Phys., 98, 123504, 2005
• 14. K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana, S. Ruffenach, O. Briot, Superlattices Microstruct., 36, 737, 2004
• 15. K. Lorenz, E. Alves, U. Wahl, T. Monteiro, S. Dalmasso, R.W. Martin, K.P. O'Donnell, R. Vianden, Mater. Sci. Eng. B, 105, 97, 2003
• 16. K. Lorenz, U. Wahl, E. Alves, E. Nogales, S. Dalmasso, R.W. Martin, K.P. O'Donnell, M. Wojdak, A. Braud, T. Monteiro, T. Wojtowicz, P. Ruterana, S. Ruffenach, O. Briot, Opt. Mater., 28, 750, 2006
• 17. C. Stampfl, C.G. Van de Walle, Phys. Rev. B, 57, R15052, 1998
• 18. P. Vermaut, P. Ruterana, G. Nouet, Appl. Phys. Lett., 74, 694, 1999
• 19. K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana, S. Dalmasso, R.W. Martin, K.P. O`Donnell, S. Ruffenach, O. Briot, A. Vantomme, Mat. Res. Soc. Symp. Proc., 798, Y5.5.1, 2004
• 20. S.O. Kucheyev, J.S. Williams, J. Zou, C. Jagadish, G. Li, Appl. Phys. Lett., 78, 1373, 2001
• 21. F. Gloux, T. Wójtowicz, P. Ruterana, K. Lorenz, E. Alves, Phys. Status Solidi A, 203, 2172, 2006
• 22. S.O. Kucheyev, J.S. Williams, J. Zou, C. Jagadish, M. Pophristic, S. Guo, I.T. Ferguson, M.O. Manasreh, J. Appl. Phys., 92, 3554, 2002
• 23. A.D. Bykhovski, B.L. Gelmont, M.S. Shur, J. Appl. Phys., 78, 3691, 1995
• 24. E. Nogales, R.W. Martin, K.P. O'Donnell, K. Lorenz, E. Alves, S. Ruffenach, O. Briot, Appl. Phys. Lett., 88, 031902, 2006

Identifiers

DOI

10.12693/APhysPolA.110.125