Zn(Mn)O Surface Alloy Studied by Synchrotron Radiation Photoemission

• Authors: E. Guziewicz , K. Kopalko , J. Sadowski , M. Guziewicz , Z. Golacki
• Languages of publication: EN

Abstracts

EN

The Mn/ZnO(0001) system was investigated by synchrotron radiation photoemission. The Mn/ZnO interface with 4 ML of manganese deposited onto the ZnO surface was annealed up to 500ºC. No Mn capping layer was found at the surface after annealing as was confirmed by scanning Auger spectroscopy experiment. We used a resonant photoemission to extract the Mn3d partial density of states in photoemission spectra. The Mn3d states contribute to the electronic structure of the system within 10 eV of the Fermi level. They show three features: a main peak at 3.8-4.5 eV, a valence structure at the top of the valence band (1-3 eV), and a broad satellite situated between 5.5 and 9 eV below E_F. The satellite/main branching ratio was determined to be 0.43, which is a fingerprint of strong hybridization between the Mn3d electrons and the valence band of the crystal. The hybridization effect in Zn_{1-x} Mn_xO surface alloy is comparable to Zn_{1-x}Mn_xS and much higher than in Zn_{1-x}Mn_xSe, Zn_{1-x}Mn_xTe, and Ga_{1-x}Mn_xAs semimagnetic compounds.

Keywords

EN

73.20.-r; 79.60.-i; 79.60.Jv

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 79.60.Jv: Interfaces; heterostructures; nanostructures
• 79.60.-i: Photoemission and photoelectron spectra(for photoelectron spectroscopy, see 87.64.ks in biological physics; 82.80.Pv in chemical analysis)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 689-696

Dates

published

2005-10

received

2005-06-04

Contributors

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 36/42, 02-688 Warszawa, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 36/42, 02-688 Warszawa, Poland

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 36/42, 02-688 Warszawa, Poland

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 36/42, 02-688 Warszawa, Poland

author

Z. Golacki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 36/42, 02-688 Warszawa, Poland

References

• 1. N. Ohashi, Y. Terada, T. Ohgaki, S. Tanaka, T. Tsurumi, O. Fukunaga, H. Haneda, J. Tanaka, Jpn. J. Appl. Phys., 38, 5028, 1999
• 2. Z. Jin, T. Fukumura, M. Kawasaki, K. Ando, H. Saito, T. Sekiguchi, Y.Z. Yoo, M. Murakami, Y. Matsumoto, T. Hagesawa, H. Koinuma, Appl. Phys. Lett., 78, 3824, 2001
• 3. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys. Lett., 75, 3366, 1999
• 4. J. Sadowski, J.Z. Domagala, J. Bak-Misiuk, S. Kolesnik, M. Sawicki, K. Swiatek, J. Kanski, L. Ilver, V. Strom, J. Vac. Sci.Technol. B, 18, 1697, 2000
• 5. R. Weidemann, H.-E. Gumlich, M. Kupsch, H.-U. Middelmann, U. Becker, Phys. Rev. B, 45, 1172, 1992
• 6. M. Taniguchi, K. Mimura, H. Sato, J. Harada, K. Miyazaki, H. Namatame, Phys. Rev. B, 51, 6932, 1995
• 7. A. Wall, A. Raisanen, G. Haugstad, L. Vanzetti, A. Franciosi, Phys. Rev. B, 44, 8185, 1991
• 8. N. Happo, H. Sato, K. Mimura, S. Hosokawa, M. Taniguchi, Y. Ueda, M. Koyama, Phys. Rev. B, 50, 12211, 1994
• 9. S.-H. Wei, A. Zunger, Phys. Rev. B, 35, 2340, 1987
• 10. O. Gunnarsson, O.K. Andersen, O. Jepsen, J. Zaanen, Phys. Rev. B, 39, 1708, 1989
• 11. J. Okabayashi, A. Kimura, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka, Phys. Rev. B, 59, R2486, 1999
• 12. T. Mizokawa, T. Nambu, A. Fujimori, T. Fukumura, M. Kawasaki, Phys. Rev. B, 65, 85209, 2002

Identifiers

DOI

10.12693/APhysPolA.108.689