Application of Kelvin Probe Microscopy for Nitride Heterostructures

• Authors: R. Bożek
• Languages of publication: EN

Abstracts

EN

Kelvin probe microscopy is an experimental technique designed to investigate fluctuations of surface potential (work function per electron) related to distribution of electric charge or variations in composition. The paper describes principle and precision of measurements. The results obtained for group-III nitrides semiconductor heterostructures grown on c-plane sapphire by metal-organic vapour phase epitaxy are presented. The observations concerns defects: inversion domains for Ga- and N-polar layers, threading dislocations and effects of spontaneous polarization leading to 2D carrier gas. To achieve insight in the evolution of defects, bevelled and cross-sectioned samples were investigated along with surface of "as grown" layers. Applicability of standard Kelvin probe microscopy method was also extended by investigating dependence of the surface potential on variable wavelength illumination, offering opportunity for spectroscopy of individual defects.

Keywords

EN

07.79.-v; 61.72.Hh; 68.37.-d

Discipline

• 68.37.-d: Microscopy of surfaces, interfaces, and thin films
• 61.72.Hh: Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
• 07.79.-v: Scanning probe microscopes and components(see also 68.37.-d Microscopy of surfaces, interfaces, and thin films)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 541-554

Dates

published

2005-10

received

2005-06-04

Contributors

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.108.541