Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

• Authors: B. Vengalis , A. Rosa , J. Devenson , K. Šliužienė , V. Lisauskas , A. Oginskis , F. Anisimovas , V. Pyragas
• Languages of publication: EN

Abstracts

EN

High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.

Keywords

EN

73.40.Cg; 73.40.Lg; 75.50.Dd

Discipline

• 73.40.Cg: Contact resistance, contact potential
• 75.50.Dd: Nonmetallic ferromagnetic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 290-293

Dates

published

2005-02

received

2004-08-22

Contributors

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

A. Rosa

• Dept. of Physics, University of Lisbon, Ed C8, 1749-016 Lisbon, Portugal

author

J. Devenson

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

K. Šliužienė

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Lisauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Oginskis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

F. Anisimovas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Pyragas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. W.E. Pickett, J.S. Moodera, Physics Today, 54, 39, 2001
• 2. T. Yanagida, T. Kanki, B. Vilquin, H. Tanaka, T. Kawai, Solid State Commun., 129, 785, 2004
• 3. C. Mitra, P. Raychaudhuri, K. Dorr, K.H. Muller, L. Schultz, P.M. Oppeneer, S. Wirth, Phys. Rev. Lett., 90, 017202, 2003
• 4. B. Vengalis, A. Maneikis, F. Anisimovas, R. Butkute, L. Dapkus, A. Kindurys, J. Magn. Magn. Mater., 211, 35, 2000
• 5. B. Vengalis, F. Anisimovas, R. Butkute, L. Dapkus, A. Deksnys, V. Plausinaitiene, A. Abrutis, A. Maneikis, J. Low Temp. Phys., 117, 1659, 1999

Identifiers

DOI

10.12693/APhysPolA.107.290