Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors

• Authors: E. Shatkovskis , A. Galickas , O. Kiprijanovič
• Languages of publication: EN

Abstracts

EN

A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd_xHg_{1-x}Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I_c=5×10^{24} photons/(cm^2 s) for InAs and (1-4)×10^{24} photons/(cm^2 s) for Cd_xHg_{1-x}Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t_{opt} 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.

Keywords

EN

71.55.Gs; 72.70.Jv; 07.57.Yb; 42.62.Hk

Discipline

• 71.55.Gs: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 271-274

Dates

published

2005-02

received

2004-08-22

Contributors

author

E. Shatkovskis

• Vilnius Gediminas Technical University, Saulėtekio all. 11, Vilnius 2040, Lithuania
• Semiconductor Physics Institute, Goštauto 11, Vilnius 01108, Lithuania

author

A. Galickas

• Semiconductor Physics Institute, Goštauto 11, Vilnius 01108, Lithuania

author

O. Kiprijanovič

• Semiconductor Physics Institute, Goštauto 11, Vilnius 01108, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.271