Electroresistance of La-Ca-MnO Thin Films

• Authors: P. Cimmperman , V. Stankevič , N. Žurauskienė , S. Balevičius , F. Anisimovas , J. Paršeliūnas , O. Kiprijanovič , L. Altgilbers
• Languages of publication: EN

Abstracts

EN

Epitaxial, textured, and polycrystalline La_{0.7}Ca_{0.3}Mn O_3 films, having about 150 nm thickness, were prepared by pulsed laser deposition techniques onto (110) NdGaO_3, MgO and lucalox substrates and investigated using 10 ns duration, 0.5 ns rise time electrical pulses having amplitude up to 500 V. Electroresistance of the films [R(E)-R(0)]/R(0) was investigated up to 80 kV/cm electric field strengths in temperatures ranging from 300 K to 4.2 K. Strong (up to 93%) negative electroresistance was obtained in polycrystalline La_{0.7}Ca_{0.3}MnO_3 films prepared on MgO and lucalox substrates. The epitaxial films grown on NdGaO_3 substrate demonstrated only a small resistance change due to Joule heating induced by a current pulse. It was concluded that electroresistance manifests itself in strongly inhomogeneous manganites films exhibiting a large number of structural imperfections producing ferromagnetic tunnel junction nets.

Keywords

EN

73.50.Gr; 73.50.Lw; 73.63.Bd

Discipline

• 73.50.Lw: Thermoelectric effects
• 73.63.Bd: Nanocrystalline materials
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 1-2
• Pages: 107-114

Dates

published

2004-01/02

received

2003-09-15

Contributors

author

P. Cimmperman

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

N. Žurauskienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

S. Balevičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

F. Anisimovas

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

J. Paršeliūnas

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

O. Kiprijanovič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

L. Altgilbers

• US Army Space and Missile Defense Command, Huntsville AL, USA

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Identifiers

DOI

10.12693/APhysPolA.105.107