Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals

• Authors: N. Lieu , D. Dat , N. Liem
• Languages of publication: EN

Abstracts

EN

The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.

Keywords

EN

71.35.-y; 78.55.-m; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 1
• Pages: 67-75

Dates

published

2003-01

received

2002-09-24

Contributors

author

N. Lieu

• Institute of Materials Science, NCST of Vietnam, 8 Hoang Quoc Viet - Cau Giay - Hanoi, Vietnam

author

D. Dat

• Institute of Materials Science, NCST of Vietnam, 8 Hoang Quoc Viet - Cau Giay - Hanoi, Vietnam

author

N. Liem

• Institute of Materials Science, NCST of Vietnam, 8 Hoang Quoc Viet - Cau Giay - Hanoi, Vietnam

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Identifiers

DOI

10.12693/APhysPolA.103.67