Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO_2 Matrix

• Authors: K. Zhuravlev , I. Tyschenko , E. Vandyshev , N. Bulytova , A. Misiuk , L. Rebohle , W. Skorupa
• Languages of publication: EN

Abstracts

EN

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A "blue"-shift of PL spectrum from the SiO_2 films implanted with Si^+ ions to total dose of 1.2×10^{17} cm^{-2} with an increase in hydrostatic pressure was observed. For the films implanted with Si^+ ions to a total dose of 4.8×10^{16} cm^{-2} high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.

Keywords

EN

68.55.Ac; 73.63.Bd; 78.67.-n; 68.35.Fx

Discipline

• 73.63.Bd: Nanocrystalline materials
• 68.35.Fx: Diffusion; interface formation(see also 66.30.-h Diffusion in solids, for diffusion of adsorbates, see 68.43.Jk)
• 78.67.-n: Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures(for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 337-344

Dates

published

2002-08

received

2001-09-23

Contributors

author

K. Zhuravlev

• Institute of Semiconductor Physics, Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia

author

I. Tyschenko

• Institute of Semiconductor Physics, Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia

author

E. Vandyshev

• Institute of Semiconductor Physics, Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia

author

N. Bulytova

• Institute of Semiconductor Physics, Pr. Lavrentieva, 13, Novosibirsk, 630090, Russia

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Rebohle

• Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf, Inc., POB 510119, 01314 Dresden, Germany

author

W. Skorupa

• Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf, Inc., POB 510119, 01314 Dresden, Germany

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Identifiers

DOI

10.12693/APhysPolA.102.337