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Number of results
2001 | 100 | 3 | 387-395

Article title

Carrier Diffusion in the Barrier Enabling Formation of Charged Excitons in InAs/GaAs Quantum Dots

Content

Title variants

Languages of publication

EN

Abstracts

EN
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as a new tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.

Keywords

EN

Year

Volume

100

Issue

3

Pages

387-395

Physical description

Dates

published
2001-09
received
2001-06-01

Contributors

author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
author
  • Materials Department, University of California - Santa Barbara, Santa Barbara, California 93106, USA
author
  • Materials Department, University of California - Santa Barbara, Santa Barbara, California 93106, USA
author
  • Materials Department, University of California - Santa Barbara, Santa Barbara, California 93106, USA

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv100n314kz
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