Hydrogen Tuning of (InGa)(AsN) Optical Properties

• Authors: G. Baldassarri H. v. H. , F. Ranalli , M. Bissiri , V. Gaspari , A. Polimeni , M. Capizzi , A. Nucara , M. Geddo , M. Fischer , M. Reinhardt , A. Forchel
• Languages of publication: EN

Abstracts

EN

The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.

Keywords

EN

78.66.Fd; 71.55.Eq; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 71.55.Eq: III-V semiconductors
• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 373-378

Dates

published

2001-09

received

2001-06-01

Contributors

author

G. Baldassarri H. v. H.

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

F. Ranalli

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

M. Bissiri

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

V. Gaspari

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

A. Polimeni

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

M. Capizzi

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

A. Nucara

• INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy

author

M. Geddo

• INFM-Dipartimento di Fisica, Università di Parma, 43010 Fontanini (Parma), Italy

author

M. Fischer

• Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany

author

M. Reinhardt

• Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany

author

A. Forchel

• Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany

References

• 1. Hydrogen in Semiconductors, Eds. J.I. Pankove, N.M. Johnson, Semiconductors and Semimetals, Vol. 34, Academic Press, New York 1991
• 2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys., 35, 1273, 1996
• 3. P.R.C. Kent, A. Zunger, Phys. Rev. Lett., 86, 2609, 2001
• 4. P.N. Hai, W.M. Chen, I. Buyanova, X.P. Xin, C.W. Tu, Appl. Phys. Lett., 77, 1843, 2000
• 5. T. Mattila, S.H. Wei, A. Zunger, Phys. Rev. B, 60, R11245, 1999
• 6. E.D. Jones, N.A. Modine, A.A. Allerman, S.R. Kurtz, A.F. Wright, S.T. Tozer, X. Wei, Phys. Rev. B, 60, 4430, 1999
• 7. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Aller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, Phys. Rev. Lett., 82, 1221, 1999
• 8. A. Lindsay, E.P. O'Reilly, Solid State Commun., 112, 443, 1999
• 9. J. Neugebauer, C. Van de Walle, Phys. Rev. Lett., 75, 4452, 1995

Identifiers

DOI

10.12693/APhysPolA.100.373