Flash memory cells data loss caused by total ionizing dose and heavy ions

• Authors: Andrey Petrov , Alexey Vasil’ev , Anastasia Ulanova , Alexander Chumakov , Alexander Nikiforov
• Languages of publication: EN

Abstracts

EN

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Keywords

EN

flash memory; single event upsets; total dose

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2014
• Volume: 12
• Issue: 10
• Pages: 725-729

Dates

published

1 - 10 - 2014

online

16 - 8 - 2014

Contributors

author

Andrey Petrov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

author

Alexey Vasil’ev

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

author

Anastasia Ulanova

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

author

Alexander Chumakov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

author

Alexander Nikiforov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

References

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Identifiers

DOI

10.2478/s11534-014-0503-6