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Number of results

Journal

2013 | 11 | 12 | 1680-1685

Article title

Structural and electronic properties of zincblende phase of TlxGa1−x
AsyP1−y
quaternary alloys: First-principles study

Content

Title variants

Languages of publication

EN

Abstracts

EN
Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor TlxGa1−x
AsyP1−y
quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of TlxGa1−x
As, TlxGa1−x
P ternary and TlxGa1−x
AsyP1−y
quaternary alloys were composed by Vegard’s law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for TlxGa1−x
AsyP1−y
quaternary alloys. The band gap of TlxGa1−x
AsyP1−y
, E
g(x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on TlxGa1−x
AsyP1−y
quaternary alloys and needs experimental verification.

Publisher

Journal

Year

Volume

11

Issue

12

Pages

1680-1685

Physical description

Dates

published
1 - 12 - 2013
online
20 - 12 - 2013

Contributors

  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
author
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
author
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
author
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
author
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-013-0314-1
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