Structural properties of transparent Ti-V oxide semiconductor thin films

• Authors: Karolina Sieradzka , Danuta Kaczmarek , Jerzy Morgiel , Jaroslaw Domaradzki , Eugeniusz Prociow , Bogdan Adamiak
• Languages of publication: EN

Abstracts

EN

Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.

Keywords

EN

titanium; vanadium; oxide; magnetron sputtering; structural investigation; transparent semiconductor

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2013
• Volume: 11
• Issue: 2
• Pages: 251-257

Dates

published

1 - 2 - 2013

online

9 - 2 - 2013

Contributors

author

Karolina Sieradzka

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland

author

Danuta Kaczmarek

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland

author

Jerzy Morgiel

• Institute of Metallurgy and Materials Science, Reymonta 25, 30-059, Krakow, Poland

author

Jaroslaw Domaradzki

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland

author

Eugeniusz Prociow

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland

author

Bogdan Adamiak

• Karkonosze State Higher School, Lwowecka 18, 58-503, Jelenia Gora, Poland

References

• [1] S. M. Islam, J. V. Longeeswaran, IEEE Commun. Mag. 48, 112 (2010) http://dx.doi.org/10.1109/MCOM.2010.5473872[Crossref]
• [2] Y. D. Tretyakov, E. A. Goodilin, Russ. Chem. Rev. 78, 801 (2009) http://dx.doi.org/10.1070/RC2009v078n09ABEH004029[Crossref]
• [3] A. Facchetti, T. J. Marks, Transparent Electronics - From Synthesis to Applications (John Wiley and Sons Ltd., United Kingdom, 2010) http://dx.doi.org/10.1002/9780470710609[Crossref]
• [4] J. F. Wager, Thin Solid Films 516, 1755 (2008) http://dx.doi.org/10.1016/j.tsf.2007.06.164[Crossref]
• [5] M. G. Blamire, J. L. MacManus-Driscoll, N. D. Mathur, Z. H. Barber, Adv. Mater. 21, 3827 (2009) http://dx.doi.org/10.1002/adma.200900947[Crossref]
• [6] T. Kamiya, H. Hosono, Int. J. Appl. Ceram. Tec. 2, 285 (2005) http://dx.doi.org/10.1111/j.1744-7402.2005.02033.x[Crossref]
• [7] T. Minami, Thin Solid Films 516, 5822 (2006) http://dx.doi.org/10.1016/j.tsf.2007.10.063[Crossref]
• [8] A. N. Banerjee, Nanotechnol. Sci. Appl. 4, 35 (2011) http://dx.doi.org/10.2147/NSA.S9040[Crossref]
• [9] H. Natsuhara et al., Sol. Energ. Mat. Sol. C. 90, 2867 (2006) http://dx.doi.org/10.1016/j.solmat.2006.05.001[Crossref]
• [10] E. Szalkowska, J. Gluszek, J. Masalski, W. Tylus, J. Mater. Sci. Lett. 20, 495 (2001) http://dx.doi.org/10.1023/A:1010955811871[Crossref]
• [11] B. S. Richards, Sol. Energ. Mat. Sol. C. 79, 369 (2003) http://dx.doi.org/10.1016/S0927-0248(02)00473-7[Crossref]
• [12] M. A. Gillispie, M. F. A. M. van Hest, M. S. Dabney, J. D. Perkins, D. S. Ginley, J. Mater. Res. 22, 2832 (2007) http://dx.doi.org/10.1557/JMR.2007.0353[Crossref]
• [13] Y. Sato, H. Akizuki, T. Kamiyama, Y. Shigesato, Thin Solid Films 516, 5758 (2008) http://dx.doi.org/10.1016/j.tsf.2007.10.047[Crossref]
• [14] T. Hitosugi et al., Appl. Phys. Express 1, 111203/1 (2008) http://dx.doi.org/10.1143/APEX.1.111203
• [15] J. Domaradzki, Thin Solid Films 497, 243 (2006) http://dx.doi.org/10.1016/j.tsf.2005.10.087[Crossref]
• [16] K. Sieradzka et al., Cent. Eur. J. Phys. 9, 313 (2011) http://dx.doi.org/10.2478/s11534-010-0094-9[Crossref]
• [17] K. Sieradzka, E. L. Prociow, J. Domaradzki, M. Mazur, D. Kaczmarek, In: J. Domaradzki (Ed.), International Students and Young Scientists Workshop ‘Photonics and Microsystems’, 25–27 Jun. 2009, Wernigerode, Germany (GS Media, Wroclaw, 2009) 72 http://dx.doi.org/10.1109/STYSW.2009.5470299
• [18] K. Sieradzka et al., Thin Solid Films 520, 3472 (2012) http://dx.doi.org/10.1016/j.tsf.2011.12.050[Crossref]
• [19] R. Akbarzadeh, S. B. Umbarkar, R. S. Sonawane, S. Takle, M. K. Dongare, Appl. Catal. A-Gen. 374, 103 (2010) http://dx.doi.org/10.1016/j.apcata.2009.11.035[Crossref]
• [20] I. Tsuyumoto, K. Nawa, Solid State Ionics 179, 1227 (2008) http://dx.doi.org/10.1016/j.ssi.2008.01.061[Crossref]
• [21] R. Fajgar, J. Kupcik, J. Subrt, F. Novotny, In: R. Zboril (Ed.), 2nd International Conference on Nanotechnology, Oct 12–14, 2010, Olomouc, Czech Republic (Tanger Ltd., Ostrava, Czech Republic) 398
• [22] K. Sieradzka, J. Domaradzki, E. L. Prociow, M. Mazur, M. Lapinski, Acta Phys. Pol. A 116, 33 (2009)
• [23] D. Habel, O. Goerke, M. Tovar, E. Kondratenko, H. Schubert, J. Phase Equilib. Diff. 29, 482 (2008) http://dx.doi.org/10.1007/s11669-008-9391-z[Crossref]
• [24] F. Beteille. R. Morineau, J. Livage, M. Nagano, Mater. Res. Bull. 32, 1109 (1997) http://dx.doi.org/10.1016/S0025-5408(97)00084-6[Crossref]
• [25] E. L. Prociow, J. Domaradzki, D. Kaczmarek, T. Berlicki, Polish patent No P382163 (2007)
• [26] J. Domaradzki et al., Mat. Sci. Eng. B-Solid 109, 249 (2004) http://dx.doi.org/10.1016/j.mseb.2003.10.073[Crossref]
• [27] Card 21-1272:1967, Powder Diffraction File, Joint Committee on Powder Diffraction Standards
• [28] Card 39-0774:1990, Powder Diffraction File, Joint Committee on Powder Diffraction Standards
• [29] Card 45-1074:2000, Powder Diffraction File, Joint Committee on Powder Diffraction Standards
• [30] J. L. Labar, Microsc. Microanal. 14, 287 (2008) http://dx.doi.org/10.1017/S1431927608080380[Crossref]
• [31] J. L. Labar, Microsc. Microanal. 15, 20 (2008) http://dx.doi.org/10.1017/S1431927609090023[Crossref]
• [32] P. Nagels, In: M. H. Brodsky (Ed.), Electronic Transport in Amorphous Semiconductors (Spinger-Verlag, New York, 1979) 113 http://dx.doi.org/10.1007/3-540-16008-6_159[Crossref]
• [33] A. Szabo, A. Urda, M. Alifanti, Ann. Univ. Buc. Chim. 15, 85 (2006)
• [34] M. Muhibbullah, O. M. Hakim, M. G. M. Choudhury, Thin Solid Films 423, 103 (2003) http://dx.doi.org/10.1016/S0040-6090(02)00970-7[Crossref]
• [35] M. G. Ambia, M. N. Islam, O. M. Hakim, J. Mater. Sci. 27, 5169 (1992) http://dx.doi.org/10.1007/BF02403812[Crossref]
• [36] S. N. Phatthalung et al., Phys. Rev. B 73, 125205 (2006) http://dx.doi.org/10.1103/PhysRevB.73.125205[Crossref]

Identifiers

DOI

10.2478/s11534-012-0150-8