Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results

Journal

2011 | 9 | 3 | 729-739

Article title

New method and treatment technique applied to interband transition in GaAs1−x
Px ternary alloys

Content

Title variants

Languages of publication

EN

Abstracts

EN
In this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in comparison with conventional ones and has a wide range of application for the calculation of the fitting parameters related to nontrivial functions that initially have nonlinear fitting parameters that are difficult to evaluate. The new method was applied to determine the CPs energies from the dielectric functions of the MBE grown GaAs1−xPx ternary alloys obtained using spectroscopic ellipsometry (SE) measurements at room temperature in the 0.5-5 eV photon energy region. The obtained results are in good agreement with the results of the other methods.

Publisher

Journal

Year

Volume

9

Issue

3

Pages

729-739

Physical description

Dates

published
1 - 6 - 2011
online
26 - 2 - 2011

Contributors

  • Faculty of Physics, Magurele-Bucharest, Romania and National Mihail Sadoveanu High School, District 2, University of Bucharest, Bucharest, Romania
  • Theoretical Physics Department, Kazan State University, Kazan, 420008, Tataristan, Russia
author
  • Faculty of Art and Sciences, Department of Physics, Gazi University, Teknikokullar, Ankara, 06500, Turkey
  • Faculty of Art and Sciences, Department of Mathematics and Computer Sciences, Çankaya University, Ankara, 06530, Turkey
  • Faculty of Art and Sciences, Department of Physics, Gazi University, Teknikokullar, Ankara, 06500, Turkey

References

  • [1] S.S. Cetin, T.S. Mammadov, S. Ozcelik, Optoelectron. Adv. Mat. 3, 910 (2009)
  • [2] K.J. Kim, M.H. Lee, J.H. Bahng, K. Shim, B.D. Choe, J. Appl. Phys. 84, 3696 (1998) http://dx.doi.org/10.1063/1.368546[Crossref]
  • [3] N.B. Sedrine, J. Rihani, J.L. Stehle, J.C. Harmand, R. Chtourou, Mater. Sci. Eng. C 28, 640 (2008) http://dx.doi.org/10.1016/j.msec.2007.10.008[Crossref]
  • [4] T.H. Ghong, T.J. Kim, Y.W. Jung, Y.D. Kim, D.E. Aspnes, J. Appl. Phys. 103, 073502 (2008) http://dx.doi.org/10.1063/1.2902502[Crossref]
  • [5] S.S. Cetin et al., Surf. Interface Anal. 42, 1252 (2010) http://dx.doi.org/10.1002/sia.3265[Crossref]
  • [6] A.B. Djurisic, Y. Chan, E. Helbert, Mater. Sci. Eng. R38, 237 (2002)
  • [7] J.J. Yoon et al., Appl. Surf. Sci. 256, 1031 (2009) http://dx.doi.org/10.1016/j.apsusc.2009.01.088[Crossref]
  • [8] R.R. Nigmatullin, Appl. Magn. Reson. 14, 601 (1998) http://dx.doi.org/10.1007/BF03161865[Crossref]
  • [9] R.R. Nigmatullin, Physica A 285, 547 (2000) http://dx.doi.org/10.1016/S0378-4371(00)00237-5[Crossref]
  • [10] M.M. Abdul-Gader Jafar, R.R. Nigmatullin, Thin Solid Films 396, 280 (2001) http://dx.doi.org/10.1016/S0040-6090(01)01166-X[Crossref]
  • [11] R.R. Nigmatullin, M.M. Abdul-Gader Jafar, N. Shinyashiki, S. Sudo, S. Yagihara, J. Non-Cryst. Solids 305, 96 (2002) http://dx.doi.org/10.1016/S0022-3093(02)01125-0[Crossref]
  • [12] R.R. Nigmatullin, S.I. Osokin, G. Smith, J. Phys.-Condens. Mat. 15, 3481 (2003) http://dx.doi.org/10.1088/0953-8984/15/20/309[Crossref]
  • [13] R.R. Nigmatullin, S.I. Osokin, G. Smith, J. Phys. D Appl. Phys. 36, 2281 (2003) http://dx.doi.org/10.1088/0022-3727/36/18/018[Crossref]
  • [14] R.R. Nigmatullin, Physica B 358, 201 (2005) http://dx.doi.org/10.1016/j.physb.2005.01.173[Crossref]
  • [15] R.R. Nigmatullin, A.L. Mehaute, J. Non-Cryst. Solids 351, 2888 (2005) http://dx.doi.org/10.1016/j.jnoncrysol.2005.05.035[Crossref]
  • [16] R.R. Nigmatullin, Physica A 363, 282 (2006) http://dx.doi.org/10.1016/j.physa.2005.08.033[Crossref]
  • [17] R.R. Nigmatullin, S.O. Nelson, Signal Process. 86, 2744 (2006) http://dx.doi.org/10.1016/j.sigpro.2006.02.018[Crossref]
  • [18] R.R. Nigmatullin, S.O. Nelson, IEEE T. Dielect. El. In. 13, 1325 (2006) http://dx.doi.org/10.1109/TDEI.2006.258204[Crossref]
  • [19] R.R. Nigmatullin et al., Physica B 388, 418 (2007) http://dx.doi.org/10.1016/j.physb.2006.06.153[Crossref]
  • [20] R.R. Nigmatullin, A.A. Arbuzov, F. Salehli, A. Gis, H. Catalgil-Giz, J. Non-Cryst. Solids 353, 4143 (2007) http://dx.doi.org/10.1016/j.jnoncrysol.2007.06.043[Crossref]
  • [21] R.R. Nigmatullin, Physica B 404, 255 (2009) http://dx.doi.org/10.1016/j.physb.2008.10.047[Crossref]
  • [22] R.R. Nigmatullin, Commun. Nonlinear Sci. 15, 637 (2010) http://dx.doi.org/10.1016/j.cnsns.2009.05.019[Crossref]
  • [23] M. Al-Hasan, R.R. Nigmatullin, Renew. Energ. 28, 93 (2003) http://dx.doi.org/10.1016/S0960-1481(01)00151-3[Crossref]
  • [24] R.R. Nigmatullin, G. Smith, Physica A 320, 291 (2003) http://dx.doi.org/10.1016/S0378-4371(02)01600-X[Crossref]
  • [25] R.R. Nigmatullin, Phys. Wave Phenom. 16, 119 (2008) http://dx.doi.org/10.3103/S1541308X08020064[Crossref]
  • [26] V.V. Afanasiev, R.R. Nigmatullin, Y.E. Polsky, Tech. Phys. Lett.+ 30, 675 (2004) http://dx.doi.org/10.1134/1.1792310[Crossref]
  • [27] H. Fujiwara, Spectroscopic Ellipsometry Principles and Applications (John Wiley & Sons, New York, 2007)
  • [28] S. Adachi, Phys. Rev. B 38, 12345 (1988) http://dx.doi.org/10.1103/PhysRevB.38.12345[Crossref]
  • [29] M. Bugajski, A.M. Kontkiewicz, H. Mariette, Phys. Rev. B 28, 7105 (1983) http://dx.doi.org/10.1103/PhysRevB.28.7105[Crossref]
  • [30] C.S. Cook et al., Thin Solid Films 455, 217 (2004) http://dx.doi.org/10.1016/j.tsf.2003.11.277[Crossref]

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-010-0068-y
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.