Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results

Journal

2010 | 8 | 3 | 400-407

Article title

Plasma treatment studies of MIS devices

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH4) and ammonia(NH3) with nitrogen(N2) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N2O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.

Publisher

Journal

Year

Volume

8

Issue

3

Pages

400-407

Physical description

Dates

published
1 - 6 - 2010
online
24 - 4 - 2010

Contributors

author
  • Department of Physics, Utkal University, Bhubaneswar, 751004, India

References

  • [1] R. H. Dennard et al., IEEE J. Solid-St. Circ. 9, 256 (1974) http://dx.doi.org/10.1109/JSSC.1974.1050511[Crossref]
  • [2] G. Baccarani, M.R. Wordeman, R. H. Dennard, IEEE T. Electron Dev. 31, 452 (1984) http://dx.doi.org/10.1109/T-ED.1984.21550[Crossref]
  • [3] P. A. Packan, Science 285, 2079 (1999) http://dx.doi.org/10.1126/science.285.5436.2079[Crossref]
  • [4] G. D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys. 89, 5243 (2001) http://dx.doi.org/10.1063/1.1361065[Crossref]
  • [5] M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 158, 275 (2000) http://dx.doi.org/10.1016/S0169-4332(00)00023-4[Crossref]
  • [6] D. K. Basa, M. Bose, D. N. Bose, J. Appl. Phys. 87, 4324 (2000) http://dx.doi.org/10.1063/1.373073[Crossref]
  • [7] M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 171, 130 (2001) http://dx.doi.org/10.1016/S0169-4332(00)00557-2[Crossref]
  • [8] M. Bose, D. K. Basa, D. N. Bose, J. Vac. Sci. Technol. A19, 41 (2001)
  • [9] M. Bose, D. K. Basa, D. N. Bose, Material Letters 48, 336 (2001) http://dx.doi.org/10.1016/S0167-577X(00)00323-2[Crossref]
  • [10] P. T. Chenetal., J. Appl. Phys. 104, 014106 (2008) http://dx.doi.org/10.1063/1.2948922[Crossref]
  • [11] P. D. Kirsch, T. Lafford, Q. Wang, J. G. Ekerdt, J. Appl. Phys. 99, 023508 (2006) http://dx.doi.org/10.1063/1.2161819[Crossref]
  • [12] E. Jud, M. Tang, Y. M. Chiang, J. Appl. Phys. 103, 114108 (2008) http://dx.doi.org/10.1063/1.2937900[Crossref]
  • [13] Y. Wu, G. Lucovsky, IEEE Electr. Device L. 19, 367 (1998) http://dx.doi.org/10.1109/55.720188[Crossref]
  • [14] C. E. Morosanu, Thin Solid Films 65, 171 (1980) http://dx.doi.org/10.1016/0040-6090(80)90254-0[Crossref]
  • [15] C. J. Bedelletal., Nucl. Instrum, Meth. B59-60, 245 (1991)
  • [16] M. C. Hugon, F. Delmotte, B. Agius, J. L. Courant, J. Vac. Sci. Technol. A15, 3143 (1997)
  • [17] S. Graciaetal., J. Appl. Phys. 83, 332 (1998) http://dx.doi.org/10.1063/1.366713[Crossref]
  • [18] H. Arai, K. Tanaka, S. Kohda, J. Vac. Sci. Technol. B 6, 831 (1988) http://dx.doi.org/10.1116/1.584349[Crossref]
  • [19] Z. Lu, S. S. He, Y. Ma, G. Lucovsky, J. Non-Cryst. Solids, 187, 340 (1995) http://dx.doi.org/10.1016/0022-3093(95)00161-1[Crossref]
  • [20] Y. Ma, T. Yasuda, G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993) http://dx.doi.org/10.1116/1.578574[Crossref]
  • [21] W. Honlien, H. Reisinger, Appl. Surf. Sci. 39, 178 (1989) http://dx.doi.org/10.1016/0169-4332(89)90432-7[Crossref]
  • [22] Y. Ma, T. Yasuda, G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994) http://dx.doi.org/10.1063/1.111681[Crossref]
  • [23] M. Bose, D. N. Bose, D. K. Basa, Material Letters 52, 417 (2002) http://dx.doi.org/10.1016/S0167-577X(01)00436-0[Crossref]
  • [24] E. Rauhala, Nucl. Instrum. Meth. B40-41, 790 (1989)
  • [25] E. Rauhala, J. Saarilahti, N. Nath, Nucl. Instrum. Meth. B61, 83 (1991)
  • [26] J. Saarilathi, User’s Guide-GISA 3. 96: Program for ionscatteringanalysis, 1996
  • [27] T. Ito, I. Kato, T. Nozaki, T. Nakamura, H. Ishikawa, Appl. Phys. Lett. 38, 370 (1981) http://dx.doi.org/10.1063/1.92341[Crossref]
  • [28] L. M. Terman, Solid State Electron. 5, 285 (1962) http://dx.doi.org/10.1016/0038-1101(62)90111-9[Crossref]
  • [29] G. Dupont, H. Caquineau, B. Despax, R. Berjoan, A. Dollet, J. Phys. DAppl. Phys. 30, 1064 (1997)
  • [30] S. Ghosh, D. N. Bose, J. Mater. Sci. -Mater. El. 5, 193 (1994)
  • [31] J. Robertson, M. J. Powell, Appl. Phys. Lett. 44, 415 (1984) http://dx.doi.org/10.1063/1.94794[Crossref]
  • [32] Z. Yin, F. W. Smith, Phys. Rev. B42, 3666 (1990)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-009-0095-8
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.