Acoustically driven charge separation in semiconductor heterostructures sensed by optical spectroscopy techniques

• Authors: Vasyl Kuryliuk , Artem Podolian , Oleg Korotchenkov
• Languages of publication: EN

Abstracts

EN

We demonstrate a method of using a two-layer sandwich structure, which includes a LiNbO3 plate and a semiconductor heterostructure to create an inhomogeneous stress and piezoelectric harmonic potential in the semiconductor. Both the GaAs/AlGaAs quantum well (QW) structures and SiGe/Si heterostructures are attempted, working with and without using a piezoelectric field in the semiconductor layer. The standing-wave fields generated in the semiconductor and the electron and hole distributions driven by the piezoelectric field are computed by finite element method (FEM) techniques. It is experimentally shown that, in a GaAs/AlxGa1-x
As asymmetric double quantum well structure, the resonance enhancement of the narrower QW photoluminescence band is observed, which may be explained by the resonant charge transfer between the wider and narrower QWs. It is also shown that the piezoelectric fields quench the pure LO-phonon lines in the Raman spectra, whereas the coupled LO-phonon-plasmon mode strengthens. Experimental results indicate that the charge separation occurs in the plane of the QWs due to the piezoelectric fields. The recombination of carriers in the SiGe/Si heterostructures can be effectively enhanced by the presence of ultrasonic stress, displaying features consistent with varying electrical activity at dislocations.

Keywords

EN

ultrasonic vibrations; charge transfer; heterostructures

Discipline

• 78.67.De: Quantum wells
• 62.65.+k: Acoustical properties of solids

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2010
• Volume: 8
• Issue: 1
• Pages: 65-76

Dates

published

1 - 2 - 2010

online

15 - 11 - 2009

Contributors

author

Vasyl Kuryliuk

• Faculty of Physics, Taras Shevchenko Kyiv National University, 01601, Kyiv, Ukraine

author

Artem Podolian

• Faculty of Physics, Taras Shevchenko Kyiv National University, 01601, Kyiv, Ukraine

author

Oleg Korotchenkov

• Faculty of Physics, Taras Shevchenko Kyiv National University, 01601, Kyiv, Ukraine

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Identifiers

DOI

10.2478/s11534-009-0094-9